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| BLF6G10LS-135R Power LDMOS transistor Rev. 01 -- 17 November 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 26.5 Gp (dB) 21.0 D (%) 28.0 ACPR (dBc) -39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA: N Average output power = 26.5 W N Power gain = 21.0 dB N Efficiency = 28.0 % N ACPR = -39 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) NXP Semiconductors BLF6G10LS-135R Power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Graphic symbol 1 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF6G10LS-135R Description earless flanged LDMOST ceramic package; 2 leads Version SOT502B Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +13 32 +150 225 Unit V V A C C 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = 25 W Typ Unit 0.56 K/W BLF6G10LS-135R_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 17 November 2008 2 of 10 NXP Semiconductors BLF6G10LS-135R Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.8 mA VDS = 10 V; ID = 180 mA VDS = 28 V; ID = 950 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 9 A VGS = VGS(th) + 3.75 V; ID = 6.3 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 1.4 1.6 24 7 Typ 1.9 2.1 32 13 0.1 2.0 Max 2.4 2.6 3 300 Unit V V V A A nA S pF 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 871.5 MHz; f2 = 876.5 MHz; f3 = 886.5 MHz; f4 = 891.5 MHz; RF performance at VDS = 28 V; IDq = 950 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol PL(AV) Gp RLin D ACPR Parameter average output power power gain input return loss drain efficiency adjacent channel power ratio PL(AV) = 26.5 W PL(AV) = 26.5 W PL(AV) = 26.5 W PL(AV) = 26.5 W Conditions Min 20.0 26.0 Typ 26.5 21.0 28.0 -39 Max Unit W dB dB % -11.0 -8.0 -36.5 dBc 7.1 Ruggedness in class-AB operation The BLF6G10LS-135R is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 950 mA; PL = 135 W; f = 894 MHz. BLF6G10LS-135R_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 17 November 2008 3 of 10 NXP Semiconductors BLF6G10LS-135R Power LDMOS transistor 24 Gp (dB) 23 001aah864 75 D (%) 60 22 Gp 45 21 D 20 30 15 19 0 40 80 120 PL (W) 0 160 VDS = 28 V; IDq = 950 mA; f = 881 MHz. Fig 1. One-tone CW power gain and drain efficiency as function of load power; typical values 23 Gp (dB) 22 Gp 001aah865 60 D (%) 45 -20 IMD (dBc) -30 001aah866 IMD3 IMD5 21 30 -40 IMD7 D 20 15 -50 19 0 25 50 0 75 100 PL(PEP) (W) -60 0 25 50 75 100 PL(PEP) (W) VDS = 28 V; IDq = 950 mA; f1 = 881 MHz (100 kHz). VDS = 28 V; IDq = 950 mA; f1 = 881 MHz (100 kHz). Fig 2. Two-tone CW power gain and drain efficiency as function of peak envelope load power; typical values Fig 3. Two-tone CW intermodulation distortion as a function of peak envelope load power; typical values BLF6G10LS-135R_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 17 November 2008 4 of 10 NXP Semiconductors BLF6G10LS-135R Power LDMOS transistor 24 Gp (dB) 23 001aah867 50 D (%) 40 -20 ACPR (dBc) -30 001aah868 22 Gp 21 D 20 30 20 -40 10 19 0 12 24 36 48 60 PL(AV) (W) 0 -50 0 20 40 PL(AV) (W) 60 VDS = 28 V; IDq = 950 mA; f1 = 881 MHz; f2 = 886 MHz; carrier spacing 5 MHz. VDS = 28 V; IDq = 950 mA; f1 = 881 MHz; f2 = 886 MHz; carrier spacing 5 MHz. Fig 4. 2-carrier W-CDMA power gain and drain efficiency as function of average load power; typical values Fig 5. 2-carrier W-CDMA adjacent power channel ratio as a function of average load power; typical values 8. Test information VGG C3 C8 C9 C10 C11 C18 R3 L1 C20 VDD R1 C4 R2 C6 input 50 C1 C17 output 50 C2 C7 C5 C16 C12 C13 C14 C15 C19 001aah869 The drawing is not to scale. Fig 6. Test circuit for operation at 800 MHz BLF6G10LS-135R_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 17 November 2008 5 of 10 NXP Semiconductors BLF6G10LS-135R Power LDMOS transistor C18 C8 C9 R1 C10 C11 Q1 C3 C4 L1 R3 C20 C6 R2 C17 C1 C2 C5 C7 C19 C16 C14 C15 C12 C13 IN 800 -1000 MHz V1.0 OUT 800 -1000 MHz V1.0 001aah870 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. The drawing is not to scale. Fig 7. Table 8. Component layout List of components (see Figure 6 and 7). Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor ferrite SMD bead BLF6G10LS-135R SMD resistor 9.1 ; 0.1 W Value 68 pF 8.2 pF 10 pF 100 nF 4.7 F; 50 V 3.0 pF 220 F; 63 V Ferroxcube BDS 3/3/4.6-4S2 or equivalent [2] [1] [1] Component C1, C3, C10, C14, C17 C2, C4, C5 C6, C7 C8, C9, C12, C13 C11, C15 C16 C18, C19, C20 L1 Q1 R1, R2, R3 [1] [2] Remarks solder vertically solder vertically solder vertically Vishay or capacitor of same quality. solder vertically [1] [1] American Technical Ceramics type 100B or capacitor of same quality. TDK or capacitor of same quality. BLF6G10LS-135R_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 17 November 2008 6 of 10 NXP Semiconductors BLF6G10LS-135R Power LDMOS transistor 9. Package outline Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D1 D U1 c L 1 H U2 E1 E 2 b w2 M D M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.067 0.815 0.057 0.805 0.390 0.010 0.380 OUTLINE VERSION SOT502B REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 Fig 8. Package outline SOT502B (c) NXP B.V. 2008. All rights reserved. BLF6G10LS-135R_1 Product data sheet Rev. 01 -- 17 November 2008 7 of 10 NXP Semiconductors BLF6G10LS-135R Power LDMOS transistor 10. Abbreviations Table 9. Acronym 3GPP CCDF CDMA CW DPCH EDGE GSM LDMOS LDMOST PAR PDPCH RF VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution Global System for Mobile communications Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Release date 20081117 Data sheet status Product data sheet Change notice Supersedes Document ID BLF6G10LS-135R_1 BLF6G10LS-135R_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 17 November 2008 8 of 10 NXP Semiconductors BLF6G10LS-135R Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G10LS-135R_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 17 November 2008 9 of 10 NXP Semiconductors BLF6G10LS-135R Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 17 November 2008 Document identifier: BLF6G10LS-135R_1 |
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